Linear sampler

ABSTRACT

A frequency conversion circuit having a plurality of N signal channels, each being fed an input signal and a train of pluses having a period T and a duty cycle T/N. Each signal channel includes: a column III-V semiconductor sampler coupled the input signal and being responsive to sampling signals; and a column IV semiconductor controllable time delay for producing the train of sampling signals in response to a train of pulses produced on the column IV semiconductor, the time delay imparting a time delay to the pulses in accordance with a time delay command signal fed to the time delay. Each one of the sampling signals is produced by the time delay in each one of the channels with the period T and the duty cycle T/N with the sampling signals in one of the trains of the sampling signals being delayed with respect to the sampling signals in another one of the trains the sampling signals a time T/N.

TECHNICAL FIELD

This disclosure relates generally to linear samplers and moreparticularly to linear samplers used to convert radio frequency (RF)signals to baseband signals.

BACKGROUND AND SUMMARY

As is known in the art, RF samplers are commonly used prior toconversion to digital information in an analog to digital converter.Conventionally, the RF Sampler includes several switches that performthe frequency conversion and a baseband filtering network thatconditions the output signals.

One frequency conversion application is in phased array antenna systems,such as that shown in FIG. 1. Here, a phased array system is shownhaving a plurality of antenna or radiating elements, each one of theelements being coupled to a corresponding one of a plurality of phaseshifter sections. Each one of the phase shifter sections includes: anarray port coupled to the corresponding one of the antenna elements.Each one of the phase shifter sections directs the signal received bythe antenna element coupled to a pair of quadrature channels, each oneof the channels having: a down converter section fed by the received RFsignal and a local oscillator (LO) signal for converting the receivedradio frequency (RF) energy received by the antenna element to anintermediate frequency (IF) signal; and a phase shifter section fed bythe down conversion section for providing a phase shift to the IF signalselectively in accordance with a phase shift command provided by a beamsteering computer (BSC), as shown. The plurality of phase shiftersproduce, in response to the phase shift commands, a collimated anddirected beam. It is understood that the directed beam may be usedreciprocally in either a receive mode or, with a circulator ortransmit/receive switch, not shown, a transmit mode. Thus, if the allthe antenna elements are in-phase the antenna beam is directed along theboresight axis of the array. On the other hand if there is a fixed,non-zero, phase shift across the array, a directed beam is producedhaving an angle from the boresight axis in accordance with the fixedphase shift.

As is also known in the art, RF Samplers are commonly used to convert RFsignals to analog baseband information prior to conversion to digitalinformation in an analog to digital converter. Conventionally, the RFSampler consists of several switches that perform the frequencyconversion and a baseband filtering network that conditions the outputsignals. By using multiple switches that are active only during afraction of the input signal cycle, the RF Sampler provides improvednoise and loss performance over a conventional mixer.

More particularly, the RF Sampler is formed through the combination ofthree functions: frequency conversion via the sampling switches, LocalOscillator (LO) generation circuitry to drive the switches, and circuitsthat provide signal conditioning at the baseband output of the switches.FIG. 2A shows a simplified version of the RF Sampler architecture, wherethe input RF signal (VRF) is fed into 4 parallel switches (See a paperby Alyosha Molnar and Carline Andrews, “Impedance, Filtering and Noisein N-phase Passive CMOS Mixers,” 2012 IEEE Custom Integrated CircuitsConference (CICC), pp. 1-8, 2012). At the output of the switches, loadcapacitors form the baseband signal processing circuits. In this case,the baseband circuits are low pass filters. For an RF Samplerarchitecture with 4 switches, each of the switches are closed with a 25%duty cycle, with the frequency of the switching operation set to thefrequency of the RF signal to be down-converted. Each of the 4 switchesis closed in quadrature, meaning that only one of the 4 switches isclosed at a time, each for ¼ of the cycle time of the RF signal. Anequivalent model with is shown in FIG. 2B and the LO driving thewaveforms and resulting RF current and virtual voltage Vx is shown inFIG. 2C. One method for generating the necessary LO pulses is to use abank of dividers driven by a signal at a multiple of the RF signalfrequency (FIG. 2C). The four outputs of this RF Sampler then correspondto a differential representation of the in-phase and quadraturecomponent of the down-converted RF signal.

This RF sampling approach differs from conventional mixer architecturesin several ways. First, the switch used in the RF Sampler is designed tobe as low impedance as possible, ideally providing a perfect shortbetween the RF signal and the baseband filter. Unlike a mixer where theswitching function is matched to 50 ohms on both the input and output,the baseband filtering of the RF sampler is effectively translated toRF. The result of this is a passband filter, providing rejection ofinterfering signals outside of the desired receive band. Through thisprocess, the out-of-band linearity of the RF sampler circuitry is higherthan with mixer approaches that often require separate RF filters to bepresent prior to the frequency converting circuitry. Another keydifference is that the impedance to the switch control terminal (thegate, if the switch is a Field Effect Transistor (FET)) is ideally high,and not matched to 50 ohms. In this case, the LO generation circuitry(e.g. a network of dividers) drives the high-impedance switch terminalsand ideally alternates each switch between an open and closed state.

RF Samplers are often employed in low-cost commercial applications wherefrequency conversion is required prior to conversion to the digitaldomain. The state of the art employs silicon technology, where theswitches, the LO generation, and the baseband processing all take placewithin the same chip technology. Performing all functions on the samechip is the standard approach, as it provides the lowest cost means toachieve the functionality and enables the highest performance by keepingthe parasitics between the functional blocks low.

The inventors have recognized that in order to achieve higher RFperformance, it would be desirable to use Column III-V (for example GaN)FET switches while using silicon for the LO generation and basebandprocessing. A low parasitic interface required between the LO generationcircuitry and the switches is achieved through either heterogeneous ornearly-heterogeneous packaging approaches, or by resonating out thebondwire parasitic with passive components on the III-V die. An exampleof a nearly-heterogeneous packaging approach is The Charles Stark DraperLaboratory, Inc., Cambridge, Mass. Integrated-Ultra High DensityPackaging (iUHD) technology (U.S. Pat. Nos. 7,726,806 B2; 8,017,451 B2;8,273,603 B2) or an Redistributed Chip Packaging (RCP) RCP technology ofFreescale Semiconductor Inc., Corporate Headquarters 6501 William CannonDrive West Austin, Tex. 78735 USA. Both packaging approaches enableclose proximity of disparate MMIC technologies by encapsulating both dieusing silicon backend processing steps, where dielectric and metallayers are photo-lithographically defined to create interconnects thathave similar characteristics to the interconnects found in the back endof commercial silicon processes—significantly lower inductance thanbondwires. Heterogeneous integration of the III-V and silicon technologywould provide similarly low-parasitic interconnects. If more commonplacepackaging technologies are used, such as chip-and-wire, passivestructures on the III-V die can be used to resonate out the inductancefrom the bondwires to achieve the desired low parasitic interconnectover a bandwidth of interest.

The inventors have recognized that the III-V switch be designed suchthat the closed position is close to zero impedance at the frequency ofoperation. Passive structures in the RF path can optionally be used totune out the capacitive parasitics associated with the switch device.The baseband filtering section is designed to incorporate the parasiticsof the interconnect between III-V and silicon die, such that theparasitics become part of the passband filter response at the input RFfrequency. Because the III-V device has inherently higher voltageheadroom than silicon technology, both the in-band and out-of-bandlinearity achieve a 10-15 dB improvement over the state of the art. Thebaseband and LO generation circuitry remains in silicon technology,where the relatively large number of devices and calibration proceduresto tune the RF Sampler architecture are easily achievable.

The inventors have recognized that using III-V switches as part of an RFSampler architecture provides a significant improvement in thelinearity, making the approach more compatible with the higherperformance requirements of military systems. The enhanced RF Samplerarchitecture provides benefits over traditional III-V-based mixerarchitectures, because the RF filtering function can be performed atbaseband to achieve improved filtering response while minimizinginsertion loss. Further, while the RF Sampler provides frequencyconversion to baseband for a single RF signal, beamforming multiple RFsignals as in a phased array antenna requires independent phase controlof each RF signal and the summation of all signals into a combinedoutput.

In accordance with one embodiment of the disclosure, a signal sampler isprovided having: a column III-V semiconductor having formed therein aplurality of N, where N is an integer, transistor switches coupled to acommon input of the sampler fed by the signal, each one of the pluralityof N switches taking samples of the signal in response to a train ofsampling signals fed to such one of the switches; and a column IV (suchas silicon) semiconductor having analog signal processing circuitry anda generator for generating a plurality of N trains of the samplingsignals, each one of the plurality of N trains of sampling signals beingfed to a corresponding one of the N samplers. Each one of the N trainsof sampling signals is generated with a period T and a duty cycle T/Nwith the sampling signals in one of the plurality of N trains of thesampling signals being delayed with respect to the sampling signals inanother one of the plurality of N trains the sampling signals a timeT/N.

In one embodiment of the disclosure, the analog signal processingcircuitry a controllable time delay for producing the trains of samplingsignals in response to a train of pulses, the time delay imparting atime delay to the pulses in accordance with a time delay command signalfed to the time delay and wherein each one of the sampling signals isproduced by the time delay with the period T and the duty cycle T/N withthe sampling signals in one of the trains of the sampling signals beingdelayed with respect to the sampling signals in another one of thetrains of the sampling signals a time T/N.

In one embodiment of the disclosure, a frequency conversion circuit isprovided having a plurality of N signal channels; each being fed aninput signal and a train of pluses having a period T and a duty cycleT/N. Each signal channel includes: a sampler coupled the input signaland being responsive to sampling signals; and a controllable time delayfor producing the train of sampling signals in response to the train ofpulses, the time delay imparting a time delay to the pulses inaccordance with a time delay command signal fed to the time delay. Eachone of the sampling signals is produced by the time delay in each one ofthe channels with the period T and the duty cycle T/N with the samplingsignals in one of the trains of the sampling signals being delayed withrespect to the sampling signals in another one of the trains thesampling signals a time T/N.

With such an arrangement, the time delays between the trains of samplingsignals may be independently controlled by the individual controllabletime delays.

In one embodiment of the disclosure, a phased array antenna system isprovided having: (A) a beam steering computer, (B) a plurality M, whereM is an integers, of antenna elements each one being coupled to acorresponding one of a plurality of M antenna ports; (C) a pulse trainsource, the pulses in the train having a period T, and a duty cycle T/N;(D) a plurality of M frequency conversion/variable time delay circuits.Each one of the M frequency conversion/variable time delay circuits iscoupled to a corresponding one of the M antenna ports. Each one of the Mfrequency conversion/variable time delay circuits comprises: a pluralityof N, where N is an integer, signal channels, each one of the N signalchannels being coupled to the corresponding one of the one of the Mantenna ports. Each one of the signal channels includes: a samplercoupled to said corresponding one of the one of the M antenna ports andresponsive to sampling signals fed thereto; a controllable time delayfor producing the train of sampling signals to the sampler in such oneof the signal channels in response to a train of pulses coupled to thecontrollable time delay in such one of the signal channels, thecontrollable time delay imparting a time delay δ to the pulses in thetrain of pulses coupled to the controllable time delay in such one ofthe signal channels in accordance with a time delay command signal fedto the controllable time delay by the beam seeing computer. Each one ofthe sampling signals in the N trains of sampling signals are produced bythe controllable time delay in each one of the channels with a period Tand a duty cycle T/N with the sampling signals in one of the N trains ofthe sampling signals being delayed with respect to the sampling signalsin another one of the N trains a time T/N.

The details of one or more embodiments of the disclosure are set forthin the accompanying drawings and the description below. Other features,objects, and advantages of the disclosure will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram of a Radio Frequency beam forming system for aphased array antenna system according to the PRIOR ART;

FIGS. 2A-2C are a schematic diagram and timing diagrams of a version ofan RF Sampler architecture according to the PRIOR ART;

FIG. 3 is a block diagram of a phased array antenna system having a beamforming network and frequency conversion/time delay sections accordingto the disclosure;

FIG. 4 is a block diagram of an exemplary one of the downconversion/time delay sections used in the phased array antenna systemof FIG. 3 according to the disclosure;

FIGS. 5A and 5B are timing diagrams used in the down conversion/timedelay sections of FIGS. 3 and 4 according to the disclosure;

FIG. 6 is a block diagram of a testing arrangement for generatingcalibration factors used by a beam steering computer phased arrayantenna system of FIG. 3 in generating correction factors used by thebeam steering computer in generating time delays for the downconversion/time delay sections according to the disclosure;

FIG. 7 is a flow chart of a process used by the testing arrangement ofFIG. 6 in generating the correction factors according to the disclosure;and

FIG. 8 is a semiconductor arrangement for an exemplary one of thefrequency conversion/time delay sections of FIG. 4 according to thedisclosure.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

Referring now to FIG. 3, a phased array antenna 10 is shown, having anarray 12 of; M, where M is an integer, antenna elements 14 ₁-14 _(M).Each one of the antenna elements 14 ₁-14 _(M) is coupled to acorresponding one of a plurality of antenna ports 16 ₁-16 _(M) of acorresponding M down conversion/time delay sections 18 ₁-18 _(M), asshown. Each one of the M down conversion/time delay sections 18 ₁-18_(M), is identical in construction, an exemplary one thereof, here downconversion/time delay sections 18 ₁ being shown in detail in FIG. 4.Each one of the down conversion/time delay sections 18 ₁-18 _(M) is feda common local oscillator (LO) signal from LO source 20 on line 22, herea train of pulses having a period T and a duty cycle 25 percent dutycycle. Each one of the down conversion/time delay shifter sections 18₁-18 _(M): (1) converts the RF signal received at the antenna ports 14₁-14 _(M), respectively, to a pair of differential baseband signals; onedifferential pair being a (+) in-phase signal and a (−) in-phase signaland the other differential pair being a (+) quadrature signal and (−)quadrature signal; and (2) provide a time delay to the signals passingthrough the down conversion/time delay sections 18 ₁-18 _(M),respectively, selectively in accordance with a set of time delay signalsfed to each one of the down conversion/time delay sections 18 ₁-18 _(M)by a beam steering computer (BSC) 24, as shown. The (+) in-phase signalfrom the plurality of down conversion/time delay sections are fed, asshown in FIG. 3, to a first capacitor C1; the (−) in-phase signal fromthe plurality of down conversion/time delay sections are fed to a firstcapacitor C2; the (+) quadrature signal from the plurality of downconversion/time delay sections are fed to a first capacitor C3; the (−)quadrature signal from the plurality of down conversion/time delaysections are fed to a first capacitor C4; as shown. Thus, the fourchannels may be referred to as: a (+) in-phase signal channel (hereinsometimes also referred to as CHANNEL A); a (+) quadrature signalchannel (herein sometimes also referred to as CHANNEL B); a (−) in-phasesignal channel (herein sometimes also referred to as CHANNEL C); and, a(−) quadrature signal channel (herein sometimes also referred to asCHANNEL A). The outputs of the capacitors C1-C4 are fed to a basebandreceiver 19, as shown.

Referring now in more detail to FIG. 4, an exemplary one of the M downconversion/time delay sections 18 ₁-18 _(M), here down conversion/timedelay sections 18 ₁ is shown to include: a plurality of N, where N is aninteger, here for example, 4, signal channels (CHANNELS A-D) all havinginputs connected the antenna port 16 ₁ of the down conversion/time delaysection 18 ₁, as shown. Each one of the signal channels, CHANNEL A-D, isidentical in construction and includes sampler/time delay sections 25a-25 d, respectively, each one of the sampler/time delay sections 25a-25 d including: a sampler 26 a-26 d, respectively, here a field effecttransistor (FET) having a gate electrode fed by a train of samplingsignals on line 28 (shown in FIG. 5A); such train of sampling signals onlines 28 a-28 d being produced by a variable time delay 30 a-30 d,respectively, as shown. It is noted that all 4 time delays 30 a-30 d arefed the same LO train of pulses fed to the down conversion/time delaysection 18 ₁ on line 22. It is also noted that, referring to FIG. 3, thesame LO train of pulses is fed to all M down conversion/time delaysection 18 ₁-18 _(M) through line 22. The time delay provided by thetime delays 30 a-30 d is controlled by a time delay control signal fedto the time delays 30 a-30 d by the by the beam steering computer BSC24, as shown. It is noted that each one of the 4 time delays 30 a-30 dis fed a corresponding one of the 4 time delay control signals by theBSC 24, as shown. It is also noted that a different set of 4 time delaycontrol signals is fed to a different one of the M down conversion/timedelay sections 18 ₁-18 _(M), as shown in FIG. 3.

More particularly, as shown in FIG. 5A, the LO train of pulses on line22 (FIG. 3) has a period T and a duty cycle, T/N, here T/4. It is notedthat each one of the N trains of sampling signals produced by the timedelays 30 a-30 d in each one of the four channels, respectively, has theperiod T and the duty cycle T/N. It is also noted that the samplingsignals on line 28 a in one of the N trains of the sampling signals isdelayed with respect to the sampling signals in another one of the Ntrains the sampling signals a time T/N. More particularly, the train ofsampling signals on line 28 a fed to the sampler 26 a in the (+)quadrature signal channel is delayed in time T/4 with respect to thetrain of sampling signals on line 28 b fed to the sampler 26 b in the(+) in-phase signal channel; the train of sampling signals on line 28 bfed to the sampler 26 b in the (−) in-phase signal channel is delayed intime T/4 with respect to the train of sampling signals on line 28 c fedto the sampler 26 c in the (+) quadrature signal channel; and the trainof sampling signals on line 28 c fed to the sampler 26 c in the (−)quadrature signal channel is delayed in time T/4 with respect to thetrain of sampling signals on line 28 d fed to the sampler 26 d in the(−) quadrature signal channel.

It is noted that when the beam steering computer 24 directs a beam onboresight, the train of sampling pulses on line 28 a in the (+) in-phasechannels of all of the down conversion/time delay sections 18 ₁-18 _(M)are in-phase; however, if the beam steering computer 24 wishes to directa beam an angle Θ from boresight, the beam steering computer 24 producestime delay signals to the time delays 30 a-30 d in the M frequencyconversion/time delay sections 18 ₁-18 _(M) to delay the train ofsampling pulses in the (+) in-phase channels an amount Δ, as shown inFIG. 5B, determined by a calibration procedure to be described. It isnoted that the time delays in the produced in the other channelsmaintains the relationship described above: the train of samplingsignals on line 28 a fed to the sampler 26 b in the (+) quadraturesignal channel is delayed in time T/4 with respect to the train ofsampling signals on line 28 a fed to the sampler 26 a in the (+)in-phase signal channel; the train of sampling signals on line 26 c fedto the sampler 26 c in the (−) in-phase signal channel is delayed intime T/4 with respect to the train of sampling signals fed to thesampler 26 b in the (+) quadrature signal channel; and the train ofsampling signals on line 28 c fed to the sampler 26 c in the (−)quadrature signal channel is delayed in time T/4 with respect to thetrain of sampling signals on line 28 d fed to the sampler 26 d in the(−) quadrature signal channel.

Referring now to FIG. 6, block diagram is shown of a testing arrangementfor generating calibration factors used by the beam steering computer 24in generating correction factors used by the beam steering computer ingenerating time delays for the time delays 30 a-30 d to in turn enablethe time delays 30 a-30 d to produce the trains of sampling signal onlines 28 a-28 d described above in connection with FIGS. 5A and 5B.

The testing arrangement includes an RF source 31. The output of the RFsource 31 is fed to the (+) in-phase and (−) in phase channels (CHANNELSA and C) of the M down conversion sections/time delay sections 18 ₁-18_(M) and to the RF source is fed, after passing through a ninety degreephase shifter 32, to the (+) quadrature channel and (−) quadraturechannels (CHANNELS B and D) of the M down conversion sections/time delaysections 18 ₁-18 _(M), as shown. The outputs of the (+) in-phase and (−)in phase channels (CHANNELS A and B) of the M down conversionsections/time delay sections 18 ₁-18 _(M) are selectively coupled,through switch sections 36 ₁-36 _(M), respectively, to capacitors C₁ andC₂, respectively, as shown. The capacitors C₁ and C₂ are coupled to afirst power sensor 38 ₁, as shown, and the (+) quadrature channel and(−) quadrature channels of the M down conversion sections/time delaysections 18 ₁-18 _(M) are selectively coupled, through switch sections36 ₁-36 _(M), respectively, to capacitors C₃ and C₄, respectively, asshown. The capacitors C₃ and C₂₄ are coupled to a second power sensor 38₂, as shown,

The power sensors 38 ₁, 38 ₂ are coupled to a processor 40. Theprocessor 40 operates the switch sections 36 ₁-36 _(M) and determinescalibration, or correction factors ∈_(A) _(—) _(C) and ∈_(B) _(—) _(D)for each one of the M down conversion/time delay sections 18 ₁-18 _(M)sequentially in a manner to be described in connection with FIG. 7.Suffice it to say here that the determined correction factors ∈_(A) _(—)_(C) and ∈_(B) _(—) _(D) for each one of the M down conversion/timedelay sections 18 ₁-18 _(M) are sequentially stored in a memory 42 inthe beam steering computer 24 and are used by the beam steering computer24 in generating the time delay control signals for the variable timedelay 30 a-30 d of samplers 26 a-26 d during normal beam formingoperation of the system 10 shown in FIG. 3.

Referring now to FIG. 7, the local oscillator 20 produces a 25 percentduty cycle pulse train to the variable time delays 30 a-30 d in all fourdown converter/time delay channels (CHANNELS A-D) in one of the Mfrequency conversion/time delay sections 18 ₁-18 _(M). (Step 700). Thein-phase RF signal produced by the RF source 31 is fed to CHANNELS A ANDC of selected one of the M down converter/time delay sections 18 ₁-18_(M) (Step 701) and at the same time, the RF signal shifted in phase 90degrees by the phase shifter 32 is fed to CHANNELS B AND D of the sameselected one of the M down converter/time delay sections 18 ₁-18 _(M)(Step 702).

Two processes, PROCESS A and PROCESS B described below, here, in thisexample, now are performed to determine simultaneously the calibration,or correction factors ∈_(A) _(—) _(C) and ∈_(B) _(—) _(D) for each oneof the M down conversion/time delay sections 18 ₁-18 _(M):

Process A

The beam steering computer 24 applies a one half period time delay T/2to the time delay 30 c in CHANNEL C of the selected down converter/timedelay sections 18 ₁-18 _(M) (Step 703). The beam steering computer 24varies the one half period time delay provided to the time delay 30 crelative to the pulse train applied to the time delay 30 a of CHANNEL Awhile measuring the power sensor 38 ₁ fed by CHANNELS A AND C todetermine the relative time delay ∈_(A) _(—) _(C) producing the maximumpower output (Step 705). The calibration factors ∈_(A) _(—) _(C) arestored in the memory 42 of the beam steering computer 24 (Step 707).

Process B

The beam steering computer 24 applies quarter time period delay (T/4) tothe time delay 308 b in CHANNEL B, and three-quarter period time delay(3T/4) to the time delay 30 d in CHANNEL D of the selected downconverter/time delay sections 18 ₁-18 _(M) (Step 704). The beam steeringcomputer 24 varies the three-quarter period time delay in the pulsetrain fed to the time delay 30 d relative to the one-quarter period timedelay (T/4) provided to the time delay 30 b of CHANNEL B while measuringthe power in power sensor 38 ₂ fed by CHANNELS B AND D to determine therelative time delay ∈_(B) _(—) _(D) producing the maximum power output(Step 706). The calibration factors ∈_(B) _(—) _(D) are stored in thememory 42 of the beam steering computer 24 (Step 708).

The processes A and B continue until the calibration factors ∈_(A) _(—)_(C) and ∈_(B) _(—) _(D) have been determined for all M frequencyconversion/time delay sections 18 ₁-18 _(M) (Step 710).

Next, the entire phased array system 10 is calibrated to determine thetime delay commands for the time delays 30 a-30 d of the M frequencyconversion/time delay sections 18 ₁-18 _(M) to thereby produce properbeam angles for the phased array antenna system. For example, if R-bit,where R is an integer, time delays are used, 2^(R) beam angles may beproduced in response to a corresponding one of 2^(R) sets of four timedelays provided to time delays in the four channels (CHANNELS A, B, Cand D) of each one of the M frequency conversion/time delay sections.

To calibrate each frequency conversion/time delay section for each ofthe 2^(R) sets of four time delays, the calibration process describedearlier and summarized in FIG. 7 is performed with the RF source (31)set to phase increments corresponding with 360/2^(R) degrees. Forexample, the 0 degree case will set the phase of the RF source to belocked to the LO source (22) and the calibration procedure is performedto determine the calibration values and these values are then stored inmemory. The RF source (31) is then advanced by 360/2^(R) degrees (ifR=5, this would be 11.25 degrees) relative to the LO source (22). Thecalibration procedure is then performed for this phase setting. Thisprocess continues for all 2^(R) phase states, and then for all Mfrequency conversion/time delay sections. After calibration settings arestored in memory for all 2^(R) phase states for all M frequencyconversion/time delay sections, the system is now calibrated for alldesired beam positions where the particular beam position is determinedby the relative time delay between all M frequency conversion/time delaysections in accordance with the standard relationship between therelative phase of each antenna element in a phased array and theresulting far-field beam pattern.

Next, referring to FIG. 8, a semiconductor arrangement 800 is shown foran exemplary one of the M frequency conversion/time delay sections, heresection 18 ₁. The section includes: a column III-V (for example GalliumArsenide (GaAs or Gallium Nitride (GaN)) semiconductor 802 having formedtherein four of the Field Effect Transistors (FETs) switches 26-26 d(samplers) having the source electrodes (S) fed by the RF, as shown; thegates G fed by the sampling signals on lines 28 a-28 d, respectively, asshown; and a column IV (or example silicon) semiconductor 804 havinganalog signal processing circuitry, including the four capacitors C₁-C₄,coupled to the drain electrodes (D) of the FET switches 26 a-26 d,respectively, as shown, the four variable time delays 30 a-30 d, and theLO generator 20 for generating trains of pulses for the four variabletime delays 30 a-30 d. A low parasitic interface between the LOgeneration circuitry and the switches may be achieved through eitherheterogeneous or nearly-heterogeneous III-V/IV packaging techniquesdescribed above (the iUHD technology or the Redistributed Chip Packaging(RCP)) technology or by resonating out the bondwire parasitic withpassive components on the III-V die. More particularly, the III-Vsemiconductor 802 may have a circuit 803 of passive elements, such asinductor and capacitor C, as shown, arranged to tune out (remove) anyparasitics associated with the switches 26 a-26 d in order to achieve a50 ohm impedance match over the band of interest. It should beunderstood that other combination of parallel/series passive elementsmay be used if required.

The variable time delay circuits 30 a-30 d may include, for example, aconventional Digitally Controlled Delay Line or a conventional VoltageControlled Delay Line (VCDL) along with a conventional digital-to-analogconverter (DAC). The VCDL is a serial combination of inverters with asupply voltage on several of the inverters is connected to a controlvoltage instead of the nominal supply voltage. As this control voltageis reduced, the delay through the VCDL circuit is increased. A simple DCDAC is used to produce the control voltage based on digital commandssupplied by the beam steering computer 24, as described above. The DVDLmay include, for example, R inverters chained together, with the 1st andRth inverter powered with the nominal supply voltage and the otherinternal inverters powered by the control voltage. The control voltageis supplied by a DAC (one DAC per VCDL, where each VCDL may contain somenumber of inverters).

The arrangement 800 may be formed on a common substrate having bothIII-V and IV, as described in U.S. Pat. No. 7,994,550, entitled“Semiconductor structures having both elemental and compoundsemiconductor devices on a common substrate”, inventors, Kaper, et al.,assigned to the same assignee as the present patent application, or ontwo different substrates; one of III-V and the other of IV.

A number of embodiments of the disclosure have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the disclosure. Forexample, a plurality of the M RF samplers may coexist on the same III-Vand IV die, where portions of the IV baseband circuitry and LOgeneration circuitry can be shared. Accordingly, other embodiments arewithin the scope of the following claims.

What is claimed is:
 1. A signal sampler, comprising: a column III-Vsemiconductor having formed therein a plurality of N, where N is aninteger, transistor switches coupled to a common input of the samplerfed by the signal, each one of the plurality of N switches takingsamples of the signal in response to a train of sampling signals fed tosuch one of the switches; a column IV semiconductor having analog signalprocessing circuitry and a generator for generating a plurality of Ntrains of the sampling signals, each one of the plurality of N trains ofsampling signals being fed to a corresponding one of the N samplers;wherein each one of the N trains of sampling signals is generated with aperiod T and a duty cycle T/N with the sampling signals in one of theplurality of N trains of the sampling signals being delayed with respectto the sampling signals in another one of the plurality of N trains thesampling signals a time T/N.
 2. The signal sampler recited in claim 1wherein the analog signal processing circuitry includes a controllabletime delay for producing the trains of sampling signals in response to atrain of pulses, the time delay imparting a time delay to the pulses inaccordance with a time delay command signal fed to the time delay andwherein each one of the sampling signals is produced by the time delaywith the period T and the duty cycle T/N with the sampling signals inone of the trains of the sampling signals being delayed with respect tothe sampling signals in another one of the trains the sampling signals atime T/N.